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Sršeň Procházet materiál kontaktenhet backspegel 9 3 2003 Zlepšit Třešeň Nepohodlí

Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band

Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band

Phys. Rev. Lett. 108, 156402 (2012) - Inelastic Electron Backscattering in a Generic Helical Edge Channel
Phys. Rev. Lett. 108, 156402 (2012) - Inelastic Electron Backscattering in a Generic Helical Edge Channel

Phys. Rev. Lett. 90, 197002 (2003) - Magnon Heat Transport in Doped ${\mathrm{L}\mathrm{a}}_{2}{\mathrm{C}\mathrm{u}\mathrm{O}}_{4}$
Phys. Rev. Lett. 90, 197002 (2003) - Magnon Heat Transport in Doped ${\mathrm{L}\mathrm{a}}_{2}{\mathrm{C}\mathrm{u}\mathrm{O}}_{4}$

BSTJ 29: 4. October 1950: Theory of Relation Between Hole Concentration and Characteristics of Germanium Point Contacts. (Bardeen, J.) : Free Download, Borrow, and Streaming : Internet Archive
BSTJ 29: 4. October 1950: Theory of Relation Between Hole Concentration and Characteristics of Germanium Point Contacts. (Bardeen, J.) : Free Download, Borrow, and Streaming : Internet Archive

Speedparts Sweden - Tankgivare
Speedparts Sweden - Tankgivare

Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band

Phys. Rev. Lett. 90, 197002 (2003) - Magnon Heat Transport in Doped ${\mathrm{L}\mathrm{a}}_{2}{\mathrm{C}\mathrm{u}\mathrm{O}}_{4}$
Phys. Rev. Lett. 90, 197002 (2003) - Magnon Heat Transport in Doped ${\mathrm{L}\mathrm{a}}_{2}{\mathrm{C}\mathrm{u}\mathrm{O}}_{4}$

Phys. Rev. Lett. 108, 156402 (2012) - Inelastic Electron Backscattering in a Generic Helical Edge Channel
Phys. Rev. Lett. 108, 156402 (2012) - Inelastic Electron Backscattering in a Generic Helical Edge Channel

Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Phys. Rev. B 83, 035314 (2011) - ${I}_{2}$ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band