kompas Jihozápadní délka electron gap tref dividenda Sofistikovaný výše
Color online) I D (V G ) (log scale) of the 10 nm long 3Â3 nm 2... | Download Scientific Diagram
Electrical conduction in solid bodies
106years extrapolated hole storage time in GaSb∕AlAs quantum dots: Applied Physics Letters: Vol 91, No 24
Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy: Journal of Applied Physics: Vol 120, No 12
Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3−δ films: Applied Physics Letters: Vol 90, No 10
Spectroelectrochemical Studies on Quinacridone by Using Poly(vinyl alcohol) Coating as Protection Layer - Enengl - 2015 - ChemPhysChem - Wiley Online Library
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230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier: Applied Physics Letters: Vol 106, No 4
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Nanoscale magnetic field imaging for 2D materials | Nature Reviews Physics
Ultra Wide Band UWB Technology and Applications Young
Brief Introduction of Power Electronics and Pulse Width Modulation | SpringerLink
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Recent development of carbon quantum dots regarding their optical properties, photoluminescence mechanism, and core structure - Nanoscale (RSC Publishing) DOI:10.1039/C8NR10059D
2.1.3 Energy Gaps and General Band Structure
2 Schematic representation of the TREF process [1]. | Download Scientific Diagram
Simultaneous measurement of gas-liquid interface motion and temperature distribution on heated surface using temperature-sensitive paint - ScienceDirect
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Date retention curves of samples with different STI gap fill materials... | Download Scientific Diagram